Powder atomic layer deposition equipment PALD advantages

1, high precision deposition process, ALD deposition for single-atom deposition, and deposition of self-limiting (self-limiting), deposition accuracy up to 1A (0.1nm), much higher than the deposition accuracy of ordinary CVD.

The thickness of the deposited layer can be adjusted arbitrarily by the number of atomic deposition layers, which is highly controllable.

3, to meet the high depth to width ratio materials. For materials with irregular surface, traditional CVD process is prone to produce “hollow”, resulting in uneven deposition; ALD deposition layer is a single atomic layer, which can uniformly cover the surface layer of materials with high depth-to-width ratio (Depth-Width Ratio, D/W).

4, ultra-homogeneous coating of powder materials. With the uniquely designed Fluidized Bed, the powder material forms a fluidized state in the reactor and fully reacts with the deposition gas to achieve ultra-homogeneous coating with a high degree of isotropy.

5, the deposition of a variety of substances. Currently can be deposited chemical substances, including alumina, silicon dioxide, silicon dioxide, silicon carbide and other substances.

Low reaction temperature: the deposition temperature of ALD process is usually lower than 300°C, which can be applied to heat-sensitive materials or materials that are not resistant to high temperature (such as high-nickel ternary cathode materials).

7, high purity deposits. ALD process deposition in a high vacuum (<1 Torr) and high purity deposition gas and carrier gas switching, no impurities introduced.

8, High degree of automation control. Equipment through the PLC programming control, combined with high-precision automatic feeding system and detection system, to achieve a high degree of automation, reducing operator error.